Faculty of Natural and Agricultural Sciences
School of Physical Sciences
Department of Physics
Nyamhere, C
Jun Lecturer
Contact Details
Research Output
Contact Details:
Research Output:
Research articles in refereed specialist journals:
Auret FD, Coelho SMM, Janse van Rensburg PJ, Nyamhere C, Meyer WE: 2009. Electrical characterization of defects introduced during metallization processes in n-type germanium. Materials Science in Semiconductor Processing, 11 (5), pp 348-353, Full Text
Mtangi W, Auret FD, Nyamhere C, Janse van Rensburg PJ, Diale M, Chawanda A: 2009. Analysis of temperature dependent I-V measurements on Pd/ZnO Schottky barrier diodes and the determination of the Richardson constant. Physica B-Condensed Matter, 404 (8-11), pp 1092-1096.
Mtangi W, Auret FD, Nyamhere C, Janse van Rensburg PJ, Chawanda A, Diale MW, Nel JM, Meyer WE: 2009. The dependence of barrier height on temperature for Pd Schottky contacts on ZnO. Physica B-Condensed Matter, 404 (22), pp 4402-4405, Full Text
Chawanda A, Nyamhere C, Auret FD, Mtangi W, Hlatshwayo TT, Diale MW, Nel JM: 2009. Thermal stability study of palladium and cobalt Schottky contacts on n-Ge (100) and defects introduced during contacts fabrication and annealing process. Physica B-Condensed Matter, 404 (22), pp 4482-4484.
Das AGM, Nyamhere C, Auret FD, Hayes M: 2009. A comparative study of electronic properties of the defects introduced in P-Si: (i) During electron beam deposition of Ti/Mo, (ii) By Proton irradiation and (iii) By electron irradiation. Surface & Coatings Technology, 203 (17-18), pp 2628-2631.
Papers in refereed, published conference proceedings:
Auret FD, Mtangi W, Nyamhere C, Janse van Rensburg PJ, Chawanda A, Diale MW, Nel JM, Meyer WE: 2009. The dependence of barrier height on temperature for Pd Schottky contacts on ZnO. In Proceedings of the 23rd International Conference on Atomic Collisions in Solids (ICACS-23), Phalaborwa, South Africa, 17-22 August 2008., Elsevier, pp 4402-4405.
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