Faculty of Natural and Agricultural Sciences
School of Physical Sciences
Department of Physics
Auret, FD
MSc(Fisika) MSc(Toeg Wisk) DSc(Fisika)(Pret) - Professor
NRF Rating: B1
Contact Details
Research Interests
Research Output
Contact Details:
Telephone number: 012 420 2684 /4151
Fax number: 012 362 5288
E-mail address: danie.auret@up.ac.za
Research Interests:
Thin films and electronic materials
Nano technology
Characterisation and modification of materials
Research Output:
Research articles in refereed specialist journals:
Schifano R, Monakhov EV, Vines L, Svensson BG, Mtangi W, Auret FD: 2009. Defects in virgin hydrothermally grown n-type ZnO studied by temperature dependent Hall effect measurements. Journal of Applied Physics, 106 (4), pp 043706-1 - 043706-7.
Auret FD, Coelho SMM, Janse van Rensburg PJ, Nyamhere C, Meyer WE: 2009. Electrical characterization of defects introduced during metallization processes in n-type germanium. Materials Science in Semiconductor Processing, 11 (5), pp 348-353, Full Text
Wendler E, Bilani K, Gartner K, Wesch W, Hayes M, Auret FD, Lorenz K, Alves E: 2009. Radiation damage in ZnO ion implanted at 15 K. Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions with Materials and Atoms, 267 (16), pp 2708-2711, Full Text
Mtangi W, Auret FD, Nyamhere C, Janse van Rensburg PJ, Diale M, Chawanda A: 2009. Analysis of temperature dependent I-V measurements on Pd/ZnO Schottky barrier diodes and the determination of the Richardson constant. Physica B-Condensed Matter, 404 (8-11), pp 1092-1096.
Auret FD, Coelho SMM, Myburg G, Janse van Rensburg PJ, Meyer WE: 2009. Electronic and annealing properties of the E0,31 defect introduced during Ar plasma etching of germanium. Physica B-Condensed Matter, 404 (22), pp 4376-4378, Full Text
Coelho SMM, Auret FD, Myburg G, Janse van Rensburg PJ, Meyer WE: 2009. Current-temperature measurements of a SBD evaporated onto inductively coupled plasma cleaned germanium. Physica B-Condensed Matter, 404 (22), pp 4389-4392, Full Text
Mtangi W, Auret FD, Nyamhere C, Janse van Rensburg PJ, Chawanda A, Diale MW, Nel JM, Meyer WE: 2009. The dependence of barrier height on temperature for Pd Schottky contacts on ZnO. Physica B-Condensed Matter, 404 (22), pp 4402-4405, Full Text
Nel JM, Chawanda A, Auret FD, Jordaan W, Odendaal RQ, Hayes M, Coelho SMM: 2009. Microstructural and surface characterization of thin gold films on n-Ge (111). Physica B-Condensed Matter, 404 (22), pp 4493-4495, Full Text
Roro K T, Janse van Rensburg PJ, Auret FD, Coelho SMM: 2009. Effect of alpha-particle irradiation on the electrical properties of n-type Ge. Physica B-Condensed Matter, 404 (22), pp 4496-4498, Full Text
Nyamhere C, Das AGM, Auret FD, Chawanda A, Mtangi W, Odendaal RQ, Carr BA: 2009. Characterization of defects introduced in Sb doped Ge by 3 keV Ar sputtering using deep level transient spectroscopy (DLTS) and Laplace-DLTS (LDLTS). Physica B-Condensed Matter, 404, pp 4379-4381, Full Text
Schifano R, Monakhov EV, Svensson BG, Mtangi W, Janse van Rensburg PJ, Auret FD: 2009. Shallow levels in virgin hydrothermally grown n-type ZnO studies by thermal admittance spectroscopy. Physica B-Condensed Matter, 404, pp 4344-4348.
Janse van Rensburg PJ, Auret FD, Mattias V, Vantomme A: 2009. Electrical characterization of rare-earth implanted GaN. Physica B-Condensed Matter, 404, pp 4411-4414, Full Text
Diale MW, Auret FD: 2009. Effects of chemical treatment on barrier height and ideality factors of Au/GaN Schottky diodes. Physica B-Condensed Matter, 404, pp 4415-4418, Full Text
Hayes M, Schroeter A, Wendler E, Wesch W, Auret FD, Nel JM: 2009. Damage formation in Ge during Ar+ and He+ implantation at 15 K. Physica B-Condensed Matter, 404, pp 4382-4385, Full Text
Chawanda A, Nyamhere C, Auret FD, Mtangi W, Hlatshwayo TT, Diale MW, Nel JM: 2009. Thermal stability study of palladium and cobalt Schottky contacts on n-Ge (100) and defects introduced during contacts fabrication and annealing process. Physica B-Condensed Matter, 404 (22), pp 4482-4484.
Das AGM, Nyamhere C, Auret FD, Hayes M: 2009. A comparative study of electronic properties of the defects introduced in P-Si: (i) During electron beam deposition of Ti/Mo, (ii) By Proton irradiation and (iii) By electron irradiation. Surface & Coatings Technology, 203 (17-18), pp 2628-2631.
Papers in refereed, published conference proceedings:
Van Schalkwyk L, Diale MW, Meyer WE, Auret FD, Brink DJ: 2009. An optoelectronic station for the study of Schottkty photodiodes prepared on AlGaN. In Proceedings of SMEOS (Sensors, MEMS and Electro-optic Systems) 2009 Conference, TechnoScene, pp 76-79.
Auret FD, Coelho SMM, Myburg G, Janse van Rensburg PJ, Meyer WE: 2009. Electronic and annealing properties of the E0,31 defect introduced during Ar plasma etching of germanium. In Proceedings of the 23rd International Conference on Atomic Collisions in Solids (ICACS-23), Phalaborwa, South Africa, 17-22 August 2008., Elsevier, pp 4376-4378.
Coelho SMM, Auret FD, Myburg G, Janse van Rensburg PJ, Meyer WE: 2009. Current-temperature measurements of a SBD evaporated onto inductively coupled plasma cleaned germanium. In Proceedings of the 23rd International Conference on Atomic Collisions in Solids (ICACS-23), Phalaborwa, South Africa, 17-22 August 2008., Elsevier, pp 4389-4392.
Auret FD, Mtangi W, Nyamhere C, Janse van Rensburg PJ, Chawanda A, Diale MW, Nel JM, Meyer WE: 2009. The dependence of barrier height on temperature for Pd Schottky contacts on ZnO. In Proceedings of the 23rd International Conference on Atomic Collisions in Solids (ICACS-23), Phalaborwa, South Africa, 17-22 August 2008., Elsevier, pp 4402-4405.
Nel JM, Chawanda A, Auret FD, Jordaan W, Odendaal RQ, Hayes M, Coelho S: 2009. Microstructural and surface characterization of thin gold films on n-Ge (111). In Proceedings of the 23rd International Conference on Atomic Collisions in Solids (ICACS-23), Phalaborwa, South Africa, 17-22 August 2008., Elsevier, pp 4493-4495.
Roro K T, Janse van Rensburg PJ, Auret FD, Coelho SMM: 2009. Effect of alpha-particle irradiation on the electrical properties of n-type Ge.. In Proceedings of the 23rd International Conference on Atomic Collisions in Solids (ICACS-23), Phalaborwa, South Africa, 17-22 August 2008., Elsevier, pp 4496-4498.
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