Faculty of Natural and Agricultural Sciences
School of Physical Sciences
Department of Physics
Malherbe, JB
MSc DSc(Pret) - Professor and Head
NRF Rating: B2
Contact Details
Research Interests
Research Output
Contact Details:
Telephone number: 012 420 2896
Fax number: 012 362 5288
E-mail address: johan.malherbe@up.ac.za
Research Interests:
Characterisation and modification of materials
Chemical education
Research Output:
Research articles in refereed specialist journals:
Kunert HW, Barnas J, Brink DJ, Malherbe JB: 2006. Raman active modes of one-, two-, and three-phonon processes in the most important compounds and semiconductors with the rhombic, tetragonal, regular, trigonal, and hexagonal structures. Journal de Physique IV, 132, pp 329-336.
Brink DJ, Kunert HW, Malherbe JB, Camassel J: 2006. Pulsed electron beam annealing: A tool for post-implantation damage control in SiC. Journal de Physique IV, 132, pp 215-219.
Malherbe JB, van der Berg NG, Odendaal RQ, Krok F, Szymonski M: 2006. Ion energy dependence of nanodot formation by nitrogen-bombarded InP. Solar Energy Materials and Solar Cells, 90, pp 1504-1512.
Papers in refereed, published conference proceedings:
Brink DJ, Kunert HW, Malherbe JB, Camassel J: 2006. Pulsed electron beam annealing: A tool for post-implantation damage control in SiC. In Journal de Physique IV Proceedings. Journal of Physics IV France. The European Physical Journal. ICFSI-10. 10th International Conference on the Formation of Semiconductor Interfaces, EDP Sciences, pp 215-219.
Kunert HW, Barnas J, Brink DJ, Malherbe JB: 2006. Raman active modes of one-, two-, and three-phonon processes in the most important compounds and semiconductors with the rhombic, tetragonal, regular, trigonal, and hexagonal structures. In Journal de Physique IV Proceedings. Journal of Physics IV France. The European Physical Journal. ICFSI-10. 10th International Conference on the Formation of Semiconductor Interfaces, EDP Sciences, pp 329-336.
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