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Faculty of Natural and Agricultural Sciences
School of Physical Sciences
Department of Physics

Nyamhere, C

Jun Lecturer

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Research Output

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Research articles in refereed specialist journals:

Coelho SMM, Auret FD, Janse van Rensburg PJ, Nyamhere C, Nel JM, Hayes M: 2008. IV and CV measurements of Schottky diodes deposited on Ge by electron beam and sputter deposition. Physica status solidi C, 5 (2), pp 626-629.

Nyamhere C, Das M, Auret FD, Chawanda A: 2008. A study of electron induced defects in n-type germanium by deep level transient spectroscopy (DLTS). Physica status solidi C, 5 (2), pp 623-625.

Papers in refereed, published conference proceedings:

Nyamhere C, Das AGM, Auret FD, Hayes M: 2008. Deep level transient spectroscopy characterization of defects introduced inp-Si by electron beam deposit and proton irradiation. In Journal of Physics: Conference Series 100 (2008) 042004 doi:10.1088/1742-6596/100/4/042004. IVC-17/ICSS-13 and ICN+T2007, Institute of Physics, pp 1-4.

 

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