Faculty of Natural and Agricultural Sciences
School of Physical Sciences
Department of Physics
Thin films and electronic materials - Research Output
Research articles in refereed specialist journals:
Von Wenckstern H, Biehne G, Lorenz M, Grundmann M, Auret FD, Meyer WE, Janse van Rensburg PJ, Hayes M, Nel JM: 2008. Dependence of trap concentrations in ZnO Thin films on annealing conditions. Journal of the Korean Physical Society, 53 (3), pp 8361-2863.
Auret FD, Coelho SMM, Hayes M, Meyer WE, Nel JM: 2008. Electrical characterization of defects introduced in Ge during electron beam deposition of different metals. Physica Status Solidi A-Applications And Materials Science, 205 (1), pp 159-161, Full Text
Coelho SMM, Auret FD, Janse van Rensburg PJ, Nyamhere C, Nel JM, Hayes M: 2008. IV and CV measurements of Schottky diodes deposited on Ge by electron beam and sputter deposition. Physica status solidi C, 5 (2), pp 626-629.
Nyamhere C, Das M, Auret FD, Chawanda A: 2008. A study of electron induced defects in n-type germanium by deep level transient spectroscopy (DLTS). Physica status solidi C, 5 (2), pp 623-625.
Odendaal V, Botha JR, Auret FD: 2008. On the processing of InAs and InSb photodiode applications. Physica Status Solidi C, 5 (2), pp 580-582.
Hayes M, Schroeter A, Wendler E, Wesch W, Auret FD, Nel JM: 2008. Damage formation in Ge during Ar+ implatation oat 15 K. Physica Status Solidi C, 5 (2), pp 583-586.
Kassier GH, Hayes M, Auret FD, Diale M, Svensson B G: 2008. Hall effect studies of donors and acceptors in different types of bulk ZnO modified by annealing and hydrogen implantation. Physica Status Solidi C, 5 (2), pp 569-572.
Nel JM, Griffiths T, Van Schalkwyk L, Auret FD, Hayes M, van der Berg NG: 2008. The effect of etching on Ge(111) surfaces and Pd Schottky contacts. Physica Status Solidi C, 5` (2), pp 587-590.
Brink DJ, van der Berg NG, Prinsloo LC: 2008. The role of interface effects on the reflection of circularly polarised light from the thin-film structure of scarabus beetles. Surface and Interface Analysis, 40 (3-4), pp 769-771.
Kunert HW, Machatine AGJ, Malherbe JB, Barnas J, Hoffmann A, Wagner MR: 2008. Elementary excitations in Si, Ge, and diamond time reversal affected. Thin Solid Films, 517 (1), pp 372-375, Full Text
Kunert HW, Machatine AGJ, Malherbe JB, Barnas J, Hoffmann A, Wagner MR: 2008. Infrared absorption, multiphonon processes and time reversal effect on Si and Ge band structure. Thin Solid Films, 517 (1), pp 134-136, Full Text
Papers in refereed, published conference proceedings:
Nyamhere C, Das AGM, Auret FD, Hayes M: 2008. Deep level transient spectroscopy characterization of defects introduced inp-Si by electron beam deposit and proton irradiation. In Journal of Physics: Conference Series 100 (2008) 042004 doi:10.1088/1742-6596/100/4/042004. IVC-17/ICSS-13 and ICN+T2007, Institute of Physics, pp 1-4.
Hayes M, Schrempel F, Coelho SMM, Auret FD, Nel JM, Wesch W: 2008. RBS investigation of annealed thin gold layers on crystalline germanium. In Journal of Physics: Conference Series 100 (2008) 042004 doi:10.1088/1742-6596/100/4/042004. IVC-17/ICSS-13 and ICN+T2007, Institute of Physics, pp 1-4.
Auret FD, Meyer WE, Janse van Rensburg PJ, Hayes M, Nel JM, Von Wenckstern H, Hochmuth H, Biehne G, Lorenz M, Grundmann M: 2008. Electronic properties of shallow level defects in ZnO grown by pulsed laser deposition. In Journal of Physics: Conference Series 100 (2008) 042004 doi:10.1088/1742-6596/100/4/042004. IVC-17/ICSS-13 and ICN+T2007, Institute of Physics, pp 1-4.
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