Research 2006

Department Home

Researchers

Guest Researchers

Research Interests

Research Output

Postgraduate Student Projects 2006

Research Findings

Funded Projects

Back To

Researchers

 

Faculty of Natural and Agricultural Sciences
School of Physical Sciences
Department of Physics

Auret, FD

MSc(Fisika) MSc(Toeg Wisk) DSc(Fisika)(Pret) - Professor

NRF Rating: B1

Contact Details

Research Interests

Research Output

Contact Details:

Telephone number: 012 420 2684 /4151
Fax number: 012 362 5288
E-mail address: danie.auret@up.ac.za

Research Interests:

Thin films and electronic materials

Nano technology

Characterisation and modification of materials

Electronics and micro-electronics

Research Output:

Research articles in refereed specialist journals:

Auret FD, Meyer WE, Coelho S, Hayes M: 2006. Electrical characterization of defects introduced during electron beam deposition of Pd Schottky contacts on n -type Ge. Applied Physics Letters, 88 (24) / Jun, p. 242110.

Auret FD, Janse van Rensburg PJ, Hayes M, Nel JM, Meyer WE, Decoster S, Matias VM, Vantomme A: 2006. Electrical characterization of defects introduced inn-type Ge during Indium implantation. Applied Physics Letters, 89 (15) / Oct, p. 152123.

Gatzert C, Blakers A W, Deenapanray PNK, Macdonald D, Auret FD: 2006. Investigation of reactive ion etching of dielectrics and Si in CHF_3/O_2 or CHF_3/Ar for photovoltaic applications. Journal of Vacuum Science & Technology A, 24 (5) / Sep/Oct, pp 1857-1865.

Auret FD, Meyer WE, Coelho S, Hayes M, Nel JM: 2006. Electrical characterization of defects introduced during electron beam doposition of Schottky contacts on n-type Ge. Materials Science in Semiconductor Processing, 9 (4-5) / Aug/Oct, pp 576-579.

Auret FD, Peaker AR, Markevich VP, Dobaczewski L, Gwilliam RM: 2006. High resolution DLTS of vacancy-donor pairs in P-, As- and Sb- doped silicon. Physica B-Condensed Matter, 376-377, pp 73-76.

Nyamhere C, Deenapanray PNK, Auret FD, Farlow FC: 2006. Characterization of defects created in Cz and epitaxial Si doped with Ga or B using Laplace-DLTS. Physica B-Condensed Matter, 376-377, pp 161-164.

Auret FD, Nel JM, Hayes M, Wu L, Wesch W, Wendler E: 2006. Electrical characterization of growth-induced defects in bulk-grown ZnO. Superlattices and Microstructures, 39, pp 17-23.

Research and technical/policy output for clients:

Hayes M, Auret FD, Nel JM, Meyer WE, Legodi MJ: Technical Report: 2006. Fabrication and Characterization of Opto-electronic Materials and Devices. For: National Laser Centre, Bellville.

 

Related Links

Department of Physics Home Page

NRF Rating Information