Faculty of Engineering, Built Environment and Information Technology
School of Engineering
Department of Electrical, Electronic and Computer Engineering
Selected Highlights from Research Findings
As integrated circuit devices (computer chips) become smaller, the transistor speed becomes faster. However, the metal interconnect lines and oxide layers are becoming smaller, and since the chip size remains the same to get more functionality per chip, the interconnect delay increases. Optical interconnects may solve the interconnect problem. Using photons at the speed of light, instead of electrons, could increase the speed of interconnects regardless of device dimensions. This requires an optical source on the chip. The University registered two USA patents on silicon-based devices as optical sources and ways to improve the efficiency thereof. Two more provisional patents on efficiency improvement were filed in 2007. The research attracted local venture capital in 2007. The technology, known as InSiAva (Injection-enhanced Silicon in Avalanche), emerged from research of CEFIM (Carl & Emily Fuchs Institute for Microelectronics) in the Electrical, Electronic and Computer Engineering Department under direction of Prof Monuko du Plessis. The key advantage of InSiAva is that light is generated within the silicon itself. Optical interconnects require a fast switching, efficient light source. It should meet the following minimum criteria:
CMOS (complementary metal oxide silicon) compatible – the standard technology used throughout the integrated circuit industry;
Reliable lifespan;
Inexpensive;
Ten GHz frequency;
< 0.8 µm wavelength;
Internal quantum efficiency > 0.1%.
The University’s InSiAva technology meets all these criteria except the efficiency, making efficiency improvement the current research focus.
Contact person: Prof M du Plessis.
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